High-power EUV lithography sources based on gas discharges and laser-produced plasmas

Uwe Stamm; Imtiaz Ahmad; Istvan Balogh; H. Birner; D. Bolshukhin; J. Brudermann; S. Enke; Frank Flohrer; Kai Gäbel; S. Götze; G. Hergenhan; Jürgen Kleinschmidt; Diethard Klöpfel; Vladimir Korobotchko; Jens Ringling; Guido Schriever; C. D. Tran; C. Ziener

doi:10.1117/12.482676

16 June 2003 High-power EUV lithography sources based on gas discharges and laser-produced plasmas

Uwe Stamm, Imtiaz Ahmad, Istvan Balogh, H. Birner, D. Bolshukhin, J. Brudermann, S. Enke, Frank Flohrer, Kai Gäbel, S. Götze, G. Hergenhan, Jürgen Kleinschmidt, Diethard Klöpfel, Vladimir Korobotchko, Jens Ringling, Guido Schriever, C. D. Tran, C. Ziener

Author Affiliations +

Proceedings Volume 5037, Emerging Lithographic Technologies VII; (2003) https://doi.org/10.1117/12.482676
Event: Microlithography 2003, 2003, Santa Clara, California, United States

Abstract

Semiconductor chip manufacturers are expecting to use extreme UV lithography for production in 2009. EUV tools require high power, brilliant light sources at 13.5 nm with collector optics producing 120 W average power at entrance of the illuminator system. Today the power and lifetime of the EUV light source are considered as the most critical issue for EUV lithography. The present paper gives an update of the development status of EUV light sources at XTREME technologies, a joint venture of Lambda Physik AG, Goettingen, and Jenoptik LOS GmbH, Jena, Germany. Results on both laser produced plasma (LPP) and gas discharge produced plasma (GDPP), the two major technologies in EUV sources, are given. The LPP EUV sources use xenon-jet target systems and pulsed lasers with 400 W average power at 10 kHz developed at XTREME technologies. The maximum conversion efficiency form laser power into EUV in-band power is 0.75% into 2π solid angle. With 300 W laser average power at 3300 Hz repetition rate up to 1.5 W EUV radiation is generated at 13.5 nm. After a collector of 5 sr this corresponds to 0.6 W in intermediate focus without spectral purity filter and 0.5 W in intermediate focus with spectral purity filter. The direct generation of the EUV emitting plasma from electrical discharges is much simpler than LPP because the electrical energy has not to be converted into laser radiation before plasma excitation. XTREME technologies' Xenon GDPP EUV sources use the Z-pinch principle with efficient sliding discharge pre-ionization. The plasma pinch size and the available emission angle have been matched to the etendue of the optical system of 2-3 mm2 sr, i.e. no additional etendue related loss reduces the usable EUV power from the source. In continuous operation at 1000 Hz the GDPP sources emit 50W into 2π solid angle are obtained from the Z-pinch sources. Spatial and temporal emission stability of the EUV sources is in the range of a few percent. Debris shields for EUV sources have been developed which give improvement of the collector optics lifetime by several orders of magnitude.

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Uwe Stamm, Imtiaz Ahmad, Istvan Balogh, H. Birner, D. Bolshukhin, J. Brudermann, S. Enke, Frank Flohrer, Kai Gäbel, S. Götze, G. Hergenhan, Jürgen Kleinschmidt, Diethard Klöpfel, Vladimir Korobotchko, Jens Ringling, Guido Schriever, C. D. Tran, and C. Ziener "High-power EUV lithography sources based on gas discharges and laser-produced plasmas", Proc. SPIE 5037, Emerging Lithographic Technologies VII, (16 June 2003); https://doi.org/10.1117/12.482676

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