Paper
2 June 2003 Simultaneous dose and focus monitoring on product wafers
Author Affiliations +
Abstract
As the design rules shrink below 130nm it will become increasingly important to monitor and control focus and dose in-line, on product wafers to maintain the ever-decreasing process window. On process layers today, it is not uncommon to see focus related errors equaling between 50-100nm in magnitude. Today these errors go undetected and CD changes are typically corrected by making a dose correction to the exposure tool. However, corrections using dose can lead to significantly smaller process latitude and therefore, products out of spec. Using a technique that was first developed by Christopher Ausschnitt at IBM Microelectronics it is possible to monitor focus and dose on production layers with a single compact target. Extending this technology on an advanced optical tool allows for precise measurements of focus and dose errors. This paper will describe the methodology of inline focus and dose monitoring using this technique on 130nm process technology with an outlook on the expectations for future nodes. Results, including focus and dose sensitivity from multiple process steps on production wafers will be shown.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Brad J. Eichelberger, Berta Dinu, and H. Pedut "Simultaneous dose and focus monitoring on product wafers", Proc. SPIE 5038, Metrology, Inspection, and Process Control for Microlithography XVII, (2 June 2003); https://doi.org/10.1117/12.483473
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CITATIONS
Cited by 5 scholarly publications and 2 patents.
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KEYWORDS
Semiconducting wafers

Metrology

Finite element methods

Scanners

Calibration

Data modeling

Critical dimension metrology

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