Paper
8 September 2003 High-speed photocathode gating for generation III image intensifier applications
Joseph P. Estrera, Michael Saldana
Author Affiliations +
Abstract
Generation III image intensifiers, employing gallium arsenide (GaAs)photocathodes, enable high speed gating into sub-nanosecond range. By utilizing high speed gating techniques, a number of important applications are realized in military rugged ground and aviation applications. Recent advancements toward size, weight, and power reduction of gated I2-based systems have have expanded the scope of applicability of these gating techniques into the battery-powered portable platforms. We present a survey of applications that are expanding from military to commercial applications as high speed gated power supply advancements are realized in the industry.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Joseph P. Estrera and Michael Saldana "High-speed photocathode gating for generation III image intensifier applications", Proc. SPIE 5079, Helmet- and Head-Mounted Displays VIII: Technologies and Applications, (8 September 2003); https://doi.org/10.1117/12.487589
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CITATIONS
Cited by 2 scholarly publications.
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KEYWORDS
Image intensifiers

Microchannel plates

Power supplies

Image fusion

Imaging systems

Electrons

Cameras

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