Paper
28 August 2003 Detection capability for chrome defect of tri-tone PSM
Jung-Kwan Lee, Dae-Woo Kim, Kyong-Mun Shin, Dong-Heok Lee, Jin-Min Kim, Sang-Soo Choi
Author Affiliations +
Abstract
The semiconductor industry continuously shrink the linewidths and the smaller linewidths are easily affected by the defects. The defects have to be detected to prevent printed images on wafers. This paper will present the detection capability of current inspection machines for chrome defects on attenuated MoSiN layer and simulation results for the effect of chrome defect on attenuated layer. Two inspection machines based on i-line light source were used for comparison of detection capability for chrome defect on attenuated layer. The effect of chrome defect on attenuated MoSiN layer was evaluated with MSM 100 at 248 nm wavelength.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jung-Kwan Lee, Dae-Woo Kim, Kyong-Mun Shin, Dong-Heok Lee, Jin-Min Kim, and Sang-Soo Choi "Detection capability for chrome defect of tri-tone PSM", Proc. SPIE 5130, Photomask and Next-Generation Lithography Mask Technology X, (28 August 2003); https://doi.org/10.1117/12.504205
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KEYWORDS
Inspection

Chromium

Photomasks

Phase shifts

Semiconducting wafers

Transmittance

Light sources

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