Laser-induced local modification of silicon microdevices: a new technique for tuning analog microelectronics

Michel Meunier; Mathieu Ducharme; Jean-Yves Degorce; Yougui Liao; Alain Lacourse

doi:10.1117/12.543669

14 November 2003 Laser-induced local modification of silicon microdevices: a new technique for tuning analog microelectronics

Michel Meunier, Mathieu Ducharme, Jean-Yves Degorce, Yougui Liao, Alain Lacourse

Author Affiliations +

Proceedings Volume 5147, ALT'02 International Conference on Advanced Laser Technologies; (2003) https://doi.org/10.1117/12.543669
Event: ALT'02 International Conference on Advanced laser Technologies, 2002, Adelboden, Switzerland

Abstract

Highly accurate resistances can be made by iteratively laser inducing local diffusion of dopants from the drain and source of a gateless field effect transistor into the channel, thereby forming an electrical link between two adjacent p-n junction diodes. Using transmission electron microscopy, we showed that the laser induced diffusible resistance can be performed without any structural modification to the microdevices. Current-voltage (I-V) characteristics of these new microdevices are shown to be linear at low voltages and sublinear at higher voltages where carrier mobility is affected by the presence of high fields. A process model involving an approximate calculation of the laser melted region in which the dopant diffusion occurs has been developed. Experimental results are well described by the proposed model.

Citation Download Citation

Michel Meunier, Mathieu Ducharme, Jean-Yves Degorce, Yougui Liao, and Alain Lacourse "Laser-induced local modification of silicon microdevices: a new technique for tuning analog microelectronics", Proc. SPIE 5147, ALT'02 International Conference on Advanced Laser Technologies, (14 November 2003); https://doi.org/10.1117/12.543669

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