Paper
2 September 2003 Study on lateral dual-element electron tunneling accelerometer
Yuhe Li, Qingxiang Li, Zhifeng Long, Yanyang Zi, Dapeng Zhao, Yangkuan Guo
Author Affiliations +
Proceedings Volume 5253, Fifth International Symposium on Instrumentation and Control Technology; (2003) https://doi.org/10.1117/12.521359
Event: Fifth International Symposium on Instrumentation and Control Technology, 2003, Beijing, China
Abstract
Electron tunneling accelerometer has the advantages of high precision, small volume, low consumption and so on. This paper introduces the design on a lateral dual-element Electron Tunneling Accelerometer. The model, structure design, parameters test and fabrication process are provided in detail. The results of analysis and simulation show that the working frequency of sensor could be up to 2 kHz.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yuhe Li, Qingxiang Li, Zhifeng Long, Yanyang Zi, Dapeng Zhao, and Yangkuan Guo "Study on lateral dual-element electron tunneling accelerometer", Proc. SPIE 5253, Fifth International Symposium on Instrumentation and Control Technology, (2 September 2003); https://doi.org/10.1117/12.521359
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KEYWORDS
Electrodes

Sensors

Finite element methods

Metals

Systems modeling

Distortion

Silicon

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