Avoidance Of Planar Channeling Effects In Si (100)

Norman L. Turner; Michael I. Current; T. C. Smith; Dave Crane; Robert Simonton

doi:10.1117/12.946468

9 April 1985 Avoidance Of Planar Channeling Effects In Si (100)

Norman L. Turner, Michael I. Current, T. C. Smith, Dave Crane, Robert Simonton

Proceedings Volume 0530, Advanced Applications of Ion Implantation; (1985) https://doi.org/10.1117/12.946468
Event: 1985 Los Angeles Technical Symposium, 1985, Los Angeles, United States

Abstract

The effects of axial and planar channeling in Si (100) crystals on junction depth and sheet resistance are studied for shallow junction implants by modern ion implantation systems. Evaluation techniques such as SIMS, spreading resistance and sheet resistance contour mapping are used to characterize planar channeling. Variations in crystal to ion beam alignment due to wafer to crystal orientation, wafer flat orientation, wafer tilt, wafer flex and beam scan angle variations are tested and results given. A model for channeling is shown and calculations for the critical channeling angles for axial and planar channeling for common dopants is derived. The ability to avoid planar channeling by predictions from the model are tested for B⁺ and As⁺ using common doses and energies. Other techniques for avoidance of planar channeling such as amorphization layers of SiO₂ and Si are tested and results given.

Citation Download Citation

Norman L. Turner, Michael I. Current, T. C. Smith, Dave Crane, and Robert Simonton "Avoidance Of Planar Channeling Effects In Si (100)", Proc. SPIE 0530, Advanced Applications of Ion Implantation, (9 April 1985); https://doi.org/10.1117/12.946468

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