Ultra-High-Resolution Dose Uniformity Monitoring With Thermal Waves

W.Lee Smith; Michael W. Taylor; John Schuur

doi:10.1117/12.946488

9 April 1985 Ultra-High-Resolution Dose Uniformity Monitoring With Thermal Waves

W.Lee Smith, Michael W. Taylor, John Schuur

Proceedings Volume 0530, Advanced Applications of Ion Implantation; (1985) https://doi.org/10.1117/12.946488
Event: 1985 Los Angeles Technical Symposium, 1985, Los Angeles, United States

Abstract

We demonstrate the ability of thermal-wave techniques to nondestructively measure ion-implanted dose and dose uniformity on the same spatial scale as the implanted features of micro-electronic devices. We present results on the variation of the thermal-wave signal with implanted dose, ion energy, surface oxide thickness, and silicon substrate resistiv-ity. We demonstrate ion dose measurements over the 10¹¹ -10¹⁵ ions/cm² range, automatic wafer mapping of ion dose uniformity, and measurement of dose variations on actual integrated circuit features. The attributes of this measurement technique make it particularly suited for production monitoring of ion implantation, especially in the critical threshold-voltage-adjust implant regime.

Citation Download Citation

W.Lee Smith, Michael W. Taylor, and John Schuur "Ultra-High-Resolution Dose Uniformity Monitoring With Thermal Waves", Proc. SPIE 0530, Advanced Applications of Ion Implantation, (9 April 1985); https://doi.org/10.1117/12.946488

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