Paper
24 May 2004 New methodology for evaluating and quantifying reticle line end shortening
Mark C Simmons, John V. Jensen, Robert Muller, Andrew M. Jost
Author Affiliations +
Abstract
A more precise and accurate method of quantifying line end effects on binary photomasks becomes necessary as reticle features continue to decrease in size. A new methodology for measuring and evaluating line ends was developed. By performing multiple step-wise measurements across a single line end feature using a fixed-width region of interest, a simulated representation of the line end profile could be generated. A high n-order polynomial fit was then applied to the resultant data set and a minimum line end value was extrapolated. This methodology reduced the measurement error directly caused by the region-of-interest (ROI) placement and sizing while, at the same time, it improved the accuracy and precision of the measurement. The generated line end profiles may be further used for modeling, simulation, or characterization.
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Mark C Simmons, John V. Jensen, Robert Muller, and Andrew M. Jost "New methodology for evaluating and quantifying reticle line end shortening", Proc. SPIE 5375, Metrology, Inspection, and Process Control for Microlithography XVIII, (24 May 2004); https://doi.org/10.1117/12.533194
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KEYWORDS
Metrology

Reticles

Time metrology

Algorithm development

Photomasks

Binary data

Distance measurement

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