Paper
14 May 2004 IBM-JSR 193-nm negative tone resist: polymer design, material properties, and lithographic performance
Kaushal S. Patel, Margaret C. Lawson, Pushkara Rao Varanasi, David R. Medeiros, Gregory M. Wallraff, Phillip J. Brock, Richard A. DiPietro, Yukio Nishimura, Takashi Chiba, Mark Slezak
Author Affiliations +
Abstract
It has been previously proposed that negative-tone resist process would have an intrinsic advantage for printing narrow trench geometry. To demonstrate this for 193nm lithography, a negative resist with performance comparable to a leading positive resist is required. In this paper we report the joint development of a hexafluoroalcohol containing, 193nm, negative-tone, chemically amplified resist based on the crosslinking approach. Lithographic performance is presented which includes the ability of the negative-tone resist to print 90nm line/space and isolated trenches with standard resist processing. The impact of the fluorinated polymer on etch performance is also quantified. Finally, key resist characteristics and their influence on performance and limiting factors such as microbridging are discussed.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kaushal S. Patel, Margaret C. Lawson, Pushkara Rao Varanasi, David R. Medeiros, Gregory M. Wallraff, Phillip J. Brock, Richard A. DiPietro, Yukio Nishimura, Takashi Chiba, and Mark Slezak "IBM-JSR 193-nm negative tone resist: polymer design, material properties, and lithographic performance", Proc. SPIE 5376, Advances in Resist Technology and Processing XXI, (14 May 2004); https://doi.org/10.1117/12.536874
Lens.org Logo
CITATIONS
Cited by 10 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Polymers

Etching

Photoresist processing

Lithography

193nm lithography

Printing

Oxides

Back to Top