High-Q photonic nanocavity

Takashi Asano; Susumu Noda

doi:10.1117/12.560744

8 October 2004 High-Q photonic nanocavity

Takashi Asano, Susumu Noda

Proceedings Volume 5515, Nanoengineering: Fabrication, Properties, Optics, and Devices; (2004) https://doi.org/10.1117/12.560744
Event: Optical Science and Technology, the SPIE 49th Annual Meeting, 2004, Denver, Colorado, United States

Abstract

High Q and ultra-small photonic nanocavity operating at optical communication wavelength is developed using a silicon-based two-dimensional photonic-crystal slab. The cavity is designed based on the concept that light should be confined gently in order to be confined strongly, which means that the envelope function of the cavity electric field profile should be gently varying but remain spatially localized. Structure of a cavity is adjusted to fit the envelope to a Gaussian function that fulfill the two conditions, and a Q factor more than 45,000 and a modal volume of 0.07 μm³ are successfully realized.

Citation Download Citation

Takashi Asano and Susumu Noda "High-Q photonic nanocavity", Proc. SPIE 5515, Nanoengineering: Fabrication, Properties, Optics, and Devices, (8 October 2004); https://doi.org/10.1117/12.560744

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