Laser cooling of semiconductors using three-photon excitation

Tzveta Apostolova; Danhong Huang; Paul M. Alsing; David A. Cardimona

doi:10.1117/12.561443

4 November 2004 Laser cooling of semiconductors using three-photon excitation

Tzveta Apostolova, Danhong Huang, Paul M. Alsing, David A. Cardimona

Proceedings Volume 5543, Infrared Spaceborne Remote Sensing XII; (2004) https://doi.org/10.1117/12.561443
Event: Optical Science and Technology, the SPIE 49th Annual Meeting, 2004, Denver, Colorado, United States

Abstract

An energy-balance equation for excited carriers and phonons is established for studying the laser cooling of wide-bandgap semiconductors using three-photon excitation process. The power-exchange densities of the system are calculated for different strengths of the excitation filed. When the power-exchange density is positive, it implies laser cooling of the lattice. The effects of initial lattice temperature and field-frequency detuning on the laser-cooling phenomenon under the three-photon excitation process is demonstrated. The power-exchange densities are compared for both laser cooling and heating using nonlinear excitation.

Citation Download Citation

Tzveta Apostolova, Danhong Huang, Paul M. Alsing, and David A. Cardimona "Laser cooling of semiconductors using three-photon excitation", Proc. SPIE 5543, Infrared Spaceborne Remote Sensing XII, (4 November 2004); https://doi.org/10.1117/12.561443

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