Heavy ion radiation damage simulations for CMOS image sensors

Henok T. Mebrahtu; Wei Gao; Paul J. Thomas; William E. Kieser; Richard I. Hornsey

doi:10.1117/12.567495

9 December 2004 Heavy ion radiation damage simulations for CMOS image sensors

Henok T. Mebrahtu, Wei Gao, Paul J. Thomas, William E. Kieser, Richard I. Hornsey

Proceedings Volume 5578, Photonics North 2004: Photonic Applications in Astronomy, Biomedicine, Imaging, Materials Processing, and Education; (2004) https://doi.org/10.1117/12.567495
Event: Photonics North, 2004, Ottawa, Ontario, Canada

Abstract

Damage in CMOS image sensors caused by heavy ions with moderate energy (~10MeV) are discussed through the effects on transistors and photodiodes. SRIM (stopping and range of ions in matter) simulation results of heavy ion radiation damage to CMOS image sensors implemented with standard 0.35μm and 0.18μm technologies are presented. Total ionizing dose, displacement damage and single event damage are described in the context of the simulation. It is shown that heavy ions with an energy in the order of 10 MeV cause significant total ionizing dose and displacement damage around the active region in 0.35μm technology, but reduced effects in 0.18μm technology. The peak of displacement damage moves into the substrate with increasing ion energy. The effect of layer structure in the 0.18 and 0.35 micron technologies on heavy ion damage is also described.

Citation Download Citation

Henok T. Mebrahtu, Wei Gao, Paul J. Thomas, William E. Kieser, and Richard I. Hornsey "Heavy ion radiation damage simulations for CMOS image sensors", Proc. SPIE 5578, Photonics North 2004: Photonic Applications in Astronomy, Biomedicine, Imaging, Materials Processing, and Education, (9 December 2004); https://doi.org/10.1117/12.567495

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