Development of nondestructive optical method and experimental setup for interstitial O:Si mapping with tens-of-microns locality

Yuri R. Vinetski; Mikhail A. Trishenkov; Nikolay V. Kravtchenko; Anatoly M. Filachov

doi:10.1117/12.567053

20 January 2005 Development of nondestructive optical method and experimental setup for interstitial O:Si mapping with tens-of-microns locality

Yuri R. Vinetski, Mikhail A. Trishenkov, Nikolay V. Kravtchenko, Anatoly M. Filachov

Author Affiliations +

Proceedings Volume 5628, Semiconductor Lasers and Applications II; (2005) https://doi.org/10.1117/12.567053
Event: Photonics Asia, 2004, Beijing, China

Abstract

Development of the optical non-destructive method and related experimental setup allowing interstitial oxygen-in-silicon "mapping" when doing in-process wafer control are described. Scanning translucent IR microscope principle has been used, in which a specific radiation source has been implemented-a solid-state tunable laser diode (TLD) on PbS-heterojunctions. This light source possesses a number of very useful features (small radiation-body size, very high spectral selectivity, high accuracy of single-mode positioning and fast mode-to-mode switching), which, in combination, allow building-up an efficient measurement procedure. Particularly, TLD allows implementation a new method enabling strong suppression of undesired interference effect of multiple beams reflected from front and back wafer's surfaces. It is shown that, when implementing double-wavelength scan procedure, not only oxygen concentration map may be derived from the data, but the info about the wafer thickness variations in the scanned area may be obtained simultaneously. The theoretical estimations are presented of the attainable limits of spatial resolution, concentration sensitivity and scan rates. The experimental setup is described realizing the method; experimental data are presented obtained by the new method demonstrating good agreement with the integrated values obtained by the standard method while possessing much better spatial resolution (~90..100μm for the present). Further improvements in the method’s parameters are discussed, as well as the perspectives for the method to be used in electronic industry.

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Yuri R. Vinetski, Mikhail A. Trishenkov, Nikolay V. Kravtchenko, and Anatoly M. Filachov "Development of nondestructive optical method and experimental setup for interstitial O:Si mapping with tens-of-microns locality", Proc. SPIE 5628, Semiconductor Lasers and Applications II, (20 January 2005); https://doi.org/10.1117/12.567053

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KEYWORDS

Semiconducting wafers

Silicon

Oxygen

Spatial resolution

Signal detection

Light sources

Absorption

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