Paper
25 March 2005 Integrated InGaAlAs/InP laser-modulator using an identical multiple quantum well active layer
Brem Kumar Saravanan, Christian Hanke, Thomas Knoedl, Martin Peschke, Roberto Macaluso, Bernhard Stegmueller
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Abstract
We present experimental results on 40 Gb/s large-signal modulation performance of 1.31μm monolithic integrated laser-modulator in the InGaAlAs/InP material system, exploiting the gain and absorption properties of an identical multiple quantum well (MQW) active layer. In continuous wave operation, at 15°C, the devices achieved threshold currents < 28 mA, fiber coupled optical power levels up to +0.4 dBm. The measured small-signal modulation bandwidth was about 32 GHz. An air-cavity based Fabry-Perot interferometer has been realized to characterize the spectral chirp of the integrated structures in the time domain up to 40 Gb/s.
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Brem Kumar Saravanan, Christian Hanke, Thomas Knoedl, Martin Peschke, Roberto Macaluso, and Bernhard Stegmueller "Integrated InGaAlAs/InP laser-modulator using an identical multiple quantum well active layer", Proc. SPIE 5729, Optoelectronic Integrated Circuits VII, (25 March 2005); https://doi.org/10.1117/12.590787
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Cited by 2 scholarly publications.
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KEYWORDS
Modulation

Absorption

Modulators

Interferometers

Quantum wells

Dispersion

Amplitude modulation

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