Doped (AlxGa1-x)0.5In0.5P alloys grown by MOCVD

Zhonghui Li; Hanben Niu

doi:10.1117/12.607557

8 December 2004 Doped (Al_xGa_1-x)_0.5In_0.5P alloys grown by MOCVD

Zhonghui Li, Hanben Niu

Proceedings Volume 5774, Fifth International Conference on Thin Film Physics and Applications; (2004) https://doi.org/10.1117/12.607557
Event: Fifth International Conference on Thin Film Physics and Applications, 2004, Shanghai, China

Abstract

Doped (Al_xGa_1-x)_0.5In_0.P alloys were grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). It was demonstrated that the Zn-doped concentration in AlGaInP alloys was increased with the reducing of growth temperature and Al composition and the enhancing of dimethylzinc (DEZn) flow rate, also, the Si-doped concentration was reduced as the rising of growth temperature and silane (SiH₄) flow rate.

Citation Download Citation

Zhonghui Li and Hanben Niu "Doped (Al_xGa_1-x)_0.5In_0.5P alloys grown by MOCVD", Proc. SPIE 5774, Fifth International Conference on Thin Film Physics and Applications, (8 December 2004); https://doi.org/10.1117/12.607557

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