Electromigration in VLSI of thin film interconnects

K. N. Tu

doi:10.1117/12.607263

8 December 2004 Electromigration in VLSI of thin film interconnects

K. N. Tu

Proceedings Volume 5774, Fifth International Conference on Thin Film Physics and Applications; (2004) https://doi.org/10.1117/12.607263
Event: Fifth International Conference on Thin Film Physics and Applications, 2004, Shanghai, China

Abstract

On a piece of silicon chip of the size of a fingernail, we can make hundreds of millions of transistors. The chip is the building block of modern microelectronic devices and computers. To function together, the transistors must be interconnected by ultra-fine aluminum or copper thin film wires having a diameter of less than one hundredth of our hair. These wires are called interconnects and carry a very high electric current density during device operation. The high current density can cause atomic displacement in the wire and lead to void (open) and extrusion (short) formation. The displacement is called electromigration and it is the most serious and persistent reliability problem of microelectronic devices and computers. The interconnects are 3-dimensional and are insulated by ultra-thin dielectric. The insulation induces thermal stress between the wire and the dielectric. The 3-dimentional structure induces current crowding when the interconnect turns, which enhances electromigration. In this proceedings paper, we review briefly what is new about electromigration in Cu interconnects.

Citation Download Citation

K. N. Tu "Electromigration in VLSI of thin film interconnects", Proc. SPIE 5774, Fifth International Conference on Thin Film Physics and Applications, (8 December 2004); https://doi.org/10.1117/12.607263

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