Formation of the copper nanoparticles in porous silicon by electroplating

Xiao Feng; Shaohui Xu; Shaoqiang Chen; Jianzhong Zhu; Ziqiang Zhu; Zongshen Lai

doi:10.1117/12.607806

8 December 2004 Formation of the copper nanoparticles in porous silicon by electroplating

Xiao Feng, Shaohui Xu, Shaoqiang Chen, Jianzhong Zhu, Ziqiang Zhu, Zongshen Lai

Proceedings Volume 5774, Fifth International Conference on Thin Film Physics and Applications; (2004) https://doi.org/10.1117/12.607806
Event: Fifth International Conference on Thin Film Physics and Applications, 2004, Shanghai, China

Abstract

A cheap and simple method of depositing copper into porous silicon by cathode electroplating was described. The existence of cubic copper nano-particles (~30nm) into porous silicon matrix was verified by X-ray Diffraction and Scanning Electron Microscopy. The microcrystal size of porous silicon and strain between porous silicon and copper layer were discussed based on the Raman spectra.

Citation Download Citation

Xiao Feng, Shaohui Xu, Shaoqiang Chen, Jianzhong Zhu, Ziqiang Zhu, and Zongshen Lai "Formation of the copper nanoparticles in porous silicon by electroplating", Proc. SPIE 5774, Fifth International Conference on Thin Film Physics and Applications, (8 December 2004); https://doi.org/10.1117/12.607806

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