Influence of experimental environment on the process of photo-assisted electrochemical etching process on silicon

Yu Chen; Pingsheng Guo; Lianwei Wang

doi:10.1117/12.607809

8 December 2004 Influence of experimental environment on the process of photo-assisted electrochemical etching process on silicon

Yu Chen, Pingsheng Guo, Lianwei Wang

Author Affiliations +

Proceedings Volume 5774, Fifth International Conference on Thin Film Physics and Applications; (2004) https://doi.org/10.1117/12.607809
Event: Fifth International Conference on Thin Film Physics and Applications, 2004, Shanghai, China

Abstract

Photo-assisted electrochemical etching is a newly developed technology for the deep etching process in silicon. The principle for such a process is based on the dissolution of silicon in a diluted HF strongly depends on the distribution of holes injection, so existence of tips lead to the electrochemical etching process along the vertical direction of the wafers. In this paper, the current-voltage characteristic of etching process and influence of temperature on the process of photo-assisted electrochemical etching process on silicon has been reported. In detail, the relationship between etching current and bias voltage in deferent region and the related mechanism, how does temperature influence this current-voltage characteristic have been explored. It is demonstrated that low temperature process and proper bias voltage is critical for the uniformity of PAECE process.

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Yu Chen, Pingsheng Guo, and Lianwei Wang "Influence of experimental environment on the process of photo-assisted electrochemical etching process on silicon", Proc. SPIE 5774, Fifth International Conference on Thin Film Physics and Applications, (8 December 2004); https://doi.org/10.1117/12.607809

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