Nodule growth in zirconium films prepared by ion beam sputtering

Dongping Zhang; HongJi Qi; Jianda Shao; Hongbo He; Zhengxiu Fan

doi:10.1117/12.607335

8 December 2004 Nodule growth in zirconium films prepared by ion beam sputtering

Dongping Zhang, HongJi Qi, Jianda Shao, Hongbo He, Zhengxiu Fan

Proceedings Volume 5774, Fifth International Conference on Thin Film Physics and Applications; (2004) https://doi.org/10.1117/12.607335
Event: Fifth International Conference on Thin Film Physics and Applications, 2004, Shanghai, China

Abstract

Zirconium films were deposited by ion beam sputtering method. A novel substrate holder was designed to realize the approximately in-situ observation the process of the nodule growth. The method of pre-setting particle seeds on the substrates was used in the film deposition. Optical microscope and SEM were presented in observation the specimen before and after annealing. An interesting growth mode of nodules which different from the reported in science literature was found in our experiment. The molecule dynamics theory and diffusion limited aggregation (DLA) model was presented to analysis this phenomenon.

Citation Download Citation

Dongping Zhang, HongJi Qi, Jianda Shao, Hongbo He, and Zhengxiu Fan "Nodule growth in zirconium films prepared by ion beam sputtering", Proc. SPIE 5774, Fifth International Conference on Thin Film Physics and Applications, (8 December 2004); https://doi.org/10.1117/12.607335

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