Paper
31 May 2005 Development of mid-wavelength QWIP FPA
Kazuo Ozaki, Yasuhito Uchiyama, Hironori Nishino, Yusuke Matsukura, Nobuyuki Kajihara, Toshio Fujii
Author Affiliations +
Abstract
A novel quantum-well infrared photodetector (QWIP) with peak responsivity in the mid-wavelength (MW) range was characterized, and the performance of a focal-plane array (FPA) based on the MW-QWIP was investigated. InGaAs/AlGaAs quantum wells were used for the QWIP, resulting in a peak absorption wavelength in the range of 4.5~5.0 μm. The doping concentration and In composition of the well layers were varied to improve the photocurrent of the QWIP. The relationship between the noise of the QWIP and the number of multi quantum well (MQW) layers was also investigated, and the optical gain g was estimated. The noise-equivalent temperature differences (NETDs) of QWIPs with various numbers of MQW layers were calculated, and the optimum number of MQW layers was evaluated. It was found that controlling the In composition of the wells was very effective for improving the photocurrent. As a result, a MW-QWIP FPA with a NETD of 21 mK at an operation temperature of 80 K, an integration time of 16 ms, and F2.0 optics was fabricated.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kazuo Ozaki, Yasuhito Uchiyama, Hironori Nishino, Yusuke Matsukura, Nobuyuki Kajihara, and Toshio Fujii "Development of mid-wavelength QWIP FPA", Proc. SPIE 5783, Infrared Technology and Applications XXXI, (31 May 2005); https://doi.org/10.1117/12.603350
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KEYWORDS
Quantum well infrared photodetectors

Doping

Staring arrays

Indium gallium arsenide

Absorption

Integrated optics

Aluminum

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