Paper
28 June 2005 Mask enhancement factor for 2D local CD error
Author Affiliations +
Abstract
With ever decreasing feature sizes, the control of mask CD errors is becoming increasingly critical in order to realize a good lithographic performance. In our previous study, mask CD errors were classified on the basis of spatial frequency into the following three categories: local CD error, global CD error, and line edge roughness (LER). If the period of a mask CD error exceeds the optical proximity effect (OPE) range, the mask CD error is classified as a global CD error. If the period is almost equal to the OPE range, the mask CD error is classified as a local CD error. As compared with the OPE range, the LER has very small spatial frequency. Introducing the concept of mask enhancement factor (MEF) for local and global CD errors, we examined the ratio of local MEF to global MEF for 1-dimensional dense and isolated line patterns. In this paper, we build on our previous study, dealing with 2-dimensional rectangular patterns. In addition, we introduce the “local MEF matrix,” which reflects the characteristics of a pattern layout and aids the estimation of local CD errors. Furthermore, we discuss the required mask specifications of 2D patterns for low-k1 lithography.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yukiyasu Arisawa and Shoji Mimotogi "Mask enhancement factor for 2D local CD error", Proc. SPIE 5853, Photomask and Next-Generation Lithography Mask Technology XII, (28 June 2005); https://doi.org/10.1117/12.617209
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KEYWORDS
Photomasks

Error analysis

Lithography

Semiconducting wafers

Line edge roughness

Spatial frequencies

Matrices

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