Toward hot-hole THz lasers in homoepitaxial Si and GaAs with layered doping

M. V. Dolguikh; A. V. Muravjov; R. E. Peale; R. A Soref; D. Bliss; C. Lynch; D. W Weyburne

doi:10.1117/12.617805

27 August 2005 Toward hot-hole THz lasers in homoepitaxial Si and GaAs with layered doping

M. V. Dolguikh, A. V. Muravjov, R. E. Peale, R. A Soref, D. Bliss, C. Lynch, D. W Weyburne

Proceedings Volume 5931, Nanoengineering: Fabrication, Properties, Optics, and Devices II; 593117 (2005) https://doi.org/10.1117/12.617805
Event: Optics and Photonics 2005, 2005, San Diego, California, United States

Abstract

A recently proposed THz laser concept in homoepitaxially grown p-Ge with layered doping is reviewed. Prospects for realizing a similar design in Si or GaAs are considered.

Citation Download Citation

M. V. Dolguikh, A. V. Muravjov, R. E. Peale, R. A Soref, D. Bliss, C. Lynch, and D. W Weyburne "Toward hot-hole THz lasers in homoepitaxial Si and GaAs with layered doping", Proc. SPIE 5931, Nanoengineering: Fabrication, Properties, Optics, and Devices II, 593117 (27 August 2005); https://doi.org/10.1117/12.617805

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