Interface transport properties and resistance switching in perovskite-oxide heterojunctions

A. Sawa; T. Fujii; M. Kawasaki; Y. Tokura

doi:10.1117/12.616682

10 September 2005 Interface transport properties and resistance switching in perovskite-oxide heterojunctions

A. Sawa, T. Fujii, M. Kawasaki, Y. Tokura

Proceedings Volume 5932, Strongly Correlated Electron Materials: Physics and Nanoengineering; 59322C (2005) https://doi.org/10.1117/12.616682
Event: Optics and Photonics 2005, 2005, San Diego, California, United States

Abstract

Electric field induced resistance switching has been investigated for perovskite-oxide heterojunctions consisting of various metal electrodes and p-type or n-type semiconducting perovskite oxides such as Pr_0.7Ca_0.3MnO₃ or Nb-doped SrTiO₃, respectively. The metal/perovskite-oxide heterojunction devices show either ohmic or rectifying I-V characteristics similar to those of a Schottky junction, depending on the work function of the metals. In addition, the rectifying I-V characteristics have large hysteresis. Corresponding to the hysteresis directions, the junction devices show reversible resistance switching upon voltage pulse applications. On the basis of the experimental results, we propose that the resistance switching and memory effect are originated by a charging effect in the trapping states at the Schottky-like metal/perovskite-oxide interfaces.

Citation Download Citation

A. Sawa, T. Fujii, M. Kawasaki, and Y. Tokura "Interface transport properties and resistance switching in perovskite-oxide heterojunctions", Proc. SPIE 5932, Strongly Correlated Electron Materials: Physics and Nanoengineering, 59322C (10 September 2005); https://doi.org/10.1117/12.616682

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