Radiation hardness of MCT LWIR arrays

Fiodor F. Sizov; Igor O. Lysiuk; Joanna V. Gumenjuk-Sichevska; Svetlana G. Bunchuk; Vyacheslav V. Zabudsky

doi:10.1117/12.623226

29 September 2005 Radiation hardness of MCT LWIR Arrays

Fiodor F. Sizov, Igor O. Lysiuk, Joanna V. Gumenjuk-Sichevska, Svetlana G. Bunchuk, Vyacheslav V. Zabudsky

Proceedings Volume 5957, Infrared Photoelectronics; 59571M (2005) https://doi.org/10.1117/12.623226
Event: Congress on Optics and Optoelectronics, 2005, Warsaw, Poland

Abstract

Investigations of designed and manufactured mercury cadmium telluride (MCT) multipixel arrays for long-wavelength infrared (LWIR) applications with n⁺-p-diodes at T≈80 K are performed. As main performance parameters the volt-ampere characteristics and differential resistances from LWIR-photodiodes were investigated using microprobe technique at T≈80 K before and after various doze of gamma-radiation exposure. The current mechanisms for those structures described within the framework of the balance equation model.

Citation Download Citation

Fiodor F. Sizov, Igor O. Lysiuk, Joanna V. Gumenjuk-Sichevska, Svetlana G. Bunchuk, and Vyacheslav V. Zabudsky "Radiation hardness of MCT LWIR Arrays", Proc. SPIE 5957, Infrared Photoelectronics, 59571M (29 September 2005); https://doi.org/10.1117/12.623226

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