Quantum confinement effect on the electrical transport and photoluminescence processes in nanocrystalline porous silicon

M. L. Ciurea; V. Iancu; I. Balberg; I. Stavarache

doi:10.1117/12.639703

14 December 2005 Quantum confinement effect on the electrical transport and photoluminescence processes in nanocrystalline porous silicon

M. L. Ciurea, V. Iancu, I. Balberg, I. Stavarache

Author Affiliations +

Proceedings Volume 5972, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies II; 59720F (2005) https://doi.org/10.1117/12.639703
Event: Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies II, 2004, Bucharest, Romania

Abstract

Photoluminescent porous silicon films were prepared and their microstructure investigations showed a double scale porosity, the walls of the micropores being formed by a nanowires network. The temperature dependence of both the electrical transport and photoluminescence processes in these films, as well as the spectral distribution of the photoluminescence, were measured. The results prove a clear correlation between the two processes. A simple quantum confiiement model was proposed for the calculation of the electronic energy in nanocrystalline silicon. The model explains the observed experimental behavior of both the electrical transport and the photoluminescence and justifies their correlation. Its quantitative predictions are in excellent agreement with the microstructure investigations. The model can be applied to a wide class of materials.

Citation Download Citation

M. L. Ciurea, V. Iancu, I. Balberg, and I. Stavarache "Quantum confinement effect on the electrical transport and photoluminescence processes in nanocrystalline porous silicon", Proc. SPIE 5972, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies II, 59720F (14 December 2005); https://doi.org/10.1117/12.639703

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