Evaluation of quartz dry etching performance for next generation phase-shift mask applications

S. A. Anderson; T. Konishi; R. Koch; S. Yokoi; A. Kumar; I. Ibrahim

doi:10.1117/12.632559

4 November 2005 Evaluation of quartz dry etching performance for next generation phase-shift mask applications

S. A. Anderson, T. Konishi, R. Koch, S. Yokoi, A. Kumar, I. Ibrahim

Proceedings Volume 5992, 25th Annual BACUS Symposium on Photomask Technology; 59920Q (2005) https://doi.org/10.1117/12.632559
Event: SPIE Photomask Technology, 2005, Monterey, California, United States

Abstract

The photomask industry is constantly reaching towards next-generation technology that can advance today's semi-conductor applications. One of the most successful and widely used techniques for advancing the current lithography capability and meeting many of the next-generation requirements is through the use of phase-shifting photomasks (PSM). Resolution enhancements techniques implemented through the use of PSMs can be a powerful tool in meeting both today's and tomorrow's demanding lithographic requirements. For this work, effects of changing etch process parameters on the quartz dry-etching process performance is investigated. Considerations are given to phase depth uniformity, sidewall profile and reactive ion etch lag in the analysis of the quartz etch performance.

Citation Download Citation

S. A. Anderson, T. Konishi, R. Koch, S. Yokoi, A. Kumar, and I. Ibrahim "Evaluation of quartz dry etching performance for next generation phase-shift mask applications", Proc. SPIE 5992, 25th Annual BACUS Symposium on Photomask Technology, 59920Q (4 November 2005); https://doi.org/10.1117/12.632559

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