Comparative analysis of photoluminescence in nano-sized amorphous and crystalline silicon embedded in silicon nitride thin film

Wenge Ding; Wei Yu; Jiangyong Zhang; Yanbin Yang; Guangsheng Fu

doi:10.1117/12.667685

23 January 2006 Comparative analysis of photoluminescence in nano-sized amorphous and crystalline silicon embedded in silicon nitride thin film

Wenge Ding, Wei Yu, Jiangyong Zhang, Yanbin Yang, Guangsheng Fu

Author Affiliations +

Proceedings Volume 6029, ICO20: Materials and Nanostructures; 60290I (2006) https://doi.org/10.1117/12.667685
Event: ICO20:Optical Devices and Instruments, 2005, Changchun, China

Abstract

Nano-sized amorphous silicon embedded in SiNx films are prepared by helicon wave plasma-enhanced chemical vapor deposition technique (HWP-CVD), and Si nanocrystals embedded in SiN_x films is obtained after furnace annealing (FA) in nitrogen ambient. The structure and optical properties of nano-sized amorphous and crystalline silicon embedded in silicon nitride (SiN_x) thin film is comparatively analyzed. Raman scattering measurement shows that, apart from appearance of a new peak at about 496-510cm^-1 corresponding to Si nanocrystals scattering, the relative scattering intensity of the two peaks located at 150 cm^-1 and at 480cm^-1 increases after high temperature annealing, indicating that the microstructures of the annealed films becomes more disordered. Meanwhile, the photothermal deflection spectra (PDS) show the optical absorption coefficient of annealed samples in the band gap increases in about one order of magnitude, indicating that more gap states exist in the annealed samples. After further annealing in forming gas and comparing the PL results of both as-deposited and thermal treatment thin film, it is found that red shift of the main peak of PL spectra is correlated with the enlarge of the silicon size. The role of interface states between silicon clusters and SiN_x matrix influence the PL behavior is discussed.

Citation Download Citation

Wenge Ding, Wei Yu, Jiangyong Zhang, Yanbin Yang, and Guangsheng Fu "Comparative analysis of photoluminescence in nano-sized amorphous and crystalline silicon embedded in silicon nitride thin film", Proc. SPIE 6029, ICO20: Materials and Nanostructures, 60290I (23 January 2006); https://doi.org/10.1117/12.667685

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
6 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Silicon

Silicon films

Absorption

Annealing

Luminescence

Raman scattering

Interfaces

Show All Keywords

Keywords/Phrases

Search In:

Publication Years