A study on high isolation RF MEMS switch

Lingling Lin; Guoqing Hu; Zonghua Lin; Wenyan Liu

doi:10.1117/12.667883

7 February 2006 A study on high isolation RF MEMS switch

Lingling Lin, Guoqing Hu, Zonghua Lin, Wenyan Liu

Proceedings Volume 6032, ICO20: MEMS, MOEMS, and NEMS; 60320Q (2006) https://doi.org/10.1117/12.667883
Event: ICO20:Optical Devices and Instruments, 2005, Changchun, China

Abstract

A new type of high isolation RF MEMS switch is studied in this paper. The structure of cantilever beam with electrodes Sandwiched between Si and SiO2 layers has been evaluated. The top and bottom dielectric materials separate two conducting electrodes when actuated. Therefore the reliability has been improved greatly. The curves of the cantilever beam and the voltage have been simulated.

Citation Download Citation

Lingling Lin, Guoqing Hu, Zonghua Lin, and Wenyan Liu "A study on high isolation RF MEMS switch", Proc. SPIE 6032, ICO20: MEMS, MOEMS, and NEMS, 60320Q (7 February 2006); https://doi.org/10.1117/12.667883

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