Enhancement of light extraction of GaN light-emitting diode by photonic crystal slab

Yan Li; Ruisheng Zheng; Yuchun Feng; Songhao Liu; Hanben Niu

doi:10.1117/12.668068

18 January 2006 Enhancement of light extraction of GaN light-emitting diode by photonic crystal slab

Yan Li, Ruisheng Zheng, Yuchun Feng, Songhao Liu, Hanben Niu

Author Affiliations +

Proceedings Volume 6033, ICO20: Illumination, Radiation, and Color Technologies; 60330D (2006) https://doi.org/10.1117/12.668068
Event: ICO20:Optical Devices and Instruments, 2005, Changchun, China

Abstract

The Light-emitting diodes based on III-nitride wide band gap semiconductors, which have a photonic crystal slab consisting of a graphite lattice of pillars on the cladding layer, is constructed. The vertical z direction optical output energy of the Light-emitting diodes is calculated by three-dimensional finite-difference time-domain method. The results show that the two-dimensional graphite-arranged pillars with a thick pillar in the middle can be utilized to enhance the light extraction. The tower-like pillars, which are thin on the top of the pillars and thick in the root of the pillars, benefit the light extraction when the angle of the tower-like pillars is proper. The optical output energy varies randomly with the change of PC columns in size and site in some extents randomly, but does not change very much.

Citation Download Citation

Yan Li, Ruisheng Zheng, Yuchun Feng, Songhao Liu, and Hanben Niu "Enhancement of light extraction of GaN light-emitting diode by photonic crystal slab", Proc. SPIE 6033, ICO20: Illumination, Radiation, and Color Technologies, 60330D (18 January 2006); https://doi.org/10.1117/12.668068

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