Paper
28 February 2006 Investigation of phonon bottleneck effect on QD lasers
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Abstract
The effects of phonon bottleneck effect on the performance of QD laser devices are studied using the rate equation model. Due to phonon bottleneck effect, simultaneous laser oscillations of ground state and excited state can occur. By comparing experimental data and theoretical prediction, the estimated value of intra-dot relaxation time is more than 100ps.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yi-Shin Su, Yi Ho, Wei-Che Chang, and Ching-Fuh Lin "Investigation of phonon bottleneck effect on QD lasers", Proc. SPIE 6115, Physics and Simulation of Optoelectronic Devices XIV, 61151G (28 February 2006); https://doi.org/10.1117/12.645033
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Cited by 1 scholarly publication.
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KEYWORDS
Phonons

Quantum dots

Gallium arsenide

Waveguides

Quantum wells

Indium arsenide

Semiconductor lasers

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