Island size control of carbon nanotube single electron transistor operating at room temperature by AFM electrical manipulation

Chan Kyeong Hyon; Takafumi Kamimura; Masatoshi Maeda; Kazuhiko Matsumoto

doi:10.1117/12.645526

28 February 2006 Island size control of carbon nanotube single electron transistor operating at room temperature by AFM electrical manipulation

Chan Kyeong Hyon, Takafumi Kamimura, Masatoshi Maeda, Kazuhiko Matsumoto

Author Affiliations +

Proceedings Volume 6127, Quantum Sensing and Nanophotonic Devices III; 612716 (2006) https://doi.org/10.1117/12.645526
Event: Integrated Optoelectronic Devices 2006, 2006, San Jose, California, United States

Abstract

We successfully fabricated single electron transistors (SETs) operating at room temperature with carbon nanotube (CNT) channel having different island sizes. The fabrication of the CNT SETs is performed by electrical manipulation using non-contact mode atomic force microscope (AFM). We carried out cutting or nicking of CNTs by applying negative voltage between a metal-coated AFM tip and CNT. A precise control over the CNT dot size was achieved by changing the nicking distance and CNT SETs with a dot size of 15 and 22 nm were fabricated. By changing the size of the dot we could arbitrarily change the operation characteristics of the device where the period of oscillations increases as the dot size decreases.

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Chan Kyeong Hyon, Takafumi Kamimura, Masatoshi Maeda, and Kazuhiko Matsumoto "Island size control of carbon nanotube single electron transistor operating at room temperature by AFM electrical manipulation", Proc. SPIE 6127, Quantum Sensing and Nanophotonic Devices III, 612716 (28 February 2006); https://doi.org/10.1117/12.645526

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KEYWORDS

Temperature metrology

Capacitance

Carbon nanotubes

Transistors

Field effect transistors

Carbon

Atomic force microscope

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