Properties of a High T0 1.3µm GaInNAs/GaAs Quantum Well Laser Diode

X. Zhang; J. A. Gupta; P. J. Barrios; G. Pakulski; X. Wu; A. Delage; T. J. Hall

doi:10.1117/12.646541

22 February 2006 Properties of a High T₀ 1.3μm GaInNAs/GaAs Quantum Well Laser Diode

X. Zhang, J. A. Gupta, P. J. Barrios, G. Pakulski, X. Wu, A. Delage, T. J. Hall

Proceedings Volume 6133, Novel In-Plane Semiconductor Lasers V; 613313 (2006) https://doi.org/10.1117/12.646541
Event: Integrated Optoelectronic Devices 2006, 2006, San Jose, California, United States

Abstract

The properties of a 1.3μm GaInNAs Double Quantum Well (QW) ridge waveguide (RWG) laser have been systematically studied for GaAs based uncooled long wavelength lasers. The threshold current, transparency current, optical gain, internal loss and quantum efficiency characteristics were assessed by light-current (L-I) measurement using devices with different geometries. Measurements of gain spectra versus injection current and temperature were taken and used to analyze GaInNAs as an active material in terms of gain, loss and transparency. The experimental observations are discussed. The results are compared with those obtained from lasers made by other conventional materials. The high characteristic temperature (T₀=155K from 20°C to 75°C) and comparable stimulated emission to InP based lasers offer the promise of application as a light source for low cost data communication systems.

Citation Download Citation

X. Zhang, J. A. Gupta, P. J. Barrios, G. Pakulski, X. Wu, A. Delage, and T. J. Hall "Properties of a High T₀ 1.3μm GaInNAs/GaAs Quantum Well Laser Diode", Proc. SPIE 6133, Novel In-Plane Semiconductor Lasers V, 613313 (22 February 2006); https://doi.org/10.1117/12.646541

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