Paper
29 March 2006 Mechanistic model of line edge roughness
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Abstract
Physically-based photoresist models, such as those in PROLITH, have been very successful in describing photolithography from a continuum standpoint. These models allow engineers to accurately predict the final resist CD on the wafer and to analyze process robustness, such as calculation of focus-exposure process windows. However, as feature sizes continue to shrink, we are beginning to see yield-limiting phenomena that are due to the molecular nature of photoresist materials. One example of this is line-edge roughness (LER). LER is believed to be due to fluctuations during the exposure process (shot noise) and post-exposure bake (thermal diffusion and reaction). We present a model that explicitly takes into account the molecular nature of the photoresist during the exposure and post-exposure bake processes. We do this by writing a master equation that describes the probability that acid molecules are generated during exposure, and then describes the evolution of the acid, quencher, and blocking-group probability distributions during the bake process. We show how all the parameters in this model can be simply derived from the parameters in a calibrated PROLITH continuum model. Finally, we demonstrate prediction of LER from an accurately tuned PROLITH continuum model and compare the LER predictions with experimental results.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mark D. Smith "Mechanistic model of line edge roughness", Proc. SPIE 6153, Advances in Resist Technology and Processing XXIII, 61530X (29 March 2006); https://doi.org/10.1117/12.659627
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Cited by 5 scholarly publications.
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KEYWORDS
Line edge roughness

Molecules

Diffusion

Polymers

Photoresist materials

Photoresist processing

Calibration

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