The improvement of DOF for sub-100nm process by focus scan

Jung-Chan Kim; Hyun-Jo Yang; Jin-Hyuck Jeon; Chan-Ha Park; James Moon; Dong-gyu Yim; Jin-Woong Kim; Shih-en Tseng; Kyu-Kab Rhe; Young-Hong Min; Alek C. Chen

doi:10.1117/12.656897

15 March 2006 The improvement of DOF for sub-100nm process by focus scan

Jung-Chan Kim, Hyun-Jo Yang, Jin-Hyuck Jeon, Chan-Ha Park, James Moon, Dong-gyu Yim, Jin-Woong Kim, Shih-en Tseng, Kyu-Kab Rhe, Young-Hong Min, Alek C. Chen

Author Affiliations +

Proceedings Volume 6154, Optical Microlithography XIX; 61541K (2006) https://doi.org/10.1117/12.656897
Event: SPIE 31st International Symposium on Advanced Lithography, 2006, San Jose, California, United States

Abstract

As the design rule of device shrinks down, it is difficult to enlarge the process window, especially DOF (Depth of Focus). It has shown good results in resolution issues with short wavelength, high NA aperture and several RET (Resolution Enhancement Technique) like special illuminator and mask techniques and so on. But it needs to be challenged for DOF process window in contact / via process having various pitch and pattern location. It is a key point in sub 100nm process development and product. It is demonstrated that focus scan method is effective for DOF improvement in contact and via layers. Focus Scan method is one of the focus drilling techniques; it is realized to tilt wafer stage so that the same point on the wafer field can be exposed in limited continual focus range using multiple focal planes through the slit of scanner tool. In this study, confirmation was inspected for simulation and wafer evaluation for focus scan effects in view of process feasibility. DOF increased over 50% with focus scan in contact mask process even though there are several issues to be solved and considered. Energy Latitude (EL) decreased a little by image contrast drop, but if we consider the process window for evolution of device, it is relatively enough for process. OPC or Bias tuning is needed for application in contact layer having various pitch and location, and overlay issues are needed to confirm for each illuminator. From these experiments, it is found that DOF margin can easily be enhanced using focus scan method. Also some fine tuning is required to adequately use this method on production devices.

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Jung-Chan Kim, Hyun-Jo Yang, Jin-Hyuck Jeon, Chan-Ha Park, James Moon, Dong-gyu Yim, Jin-Woong Kim, Shih-en Tseng, Kyu-Kab Rhe, Young-Hong Min, and Alek C. Chen "The improvement of DOF for sub-100nm process by focus scan", Proc. SPIE 6154, Optical Microlithography XIX, 61541K (15 March 2006); https://doi.org/10.1117/12.656897

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