Paper
20 March 2006 Experimental measurement of photoresist modulation curves
Author Affiliations +
Abstract
An approach to measurement of resist CD response to image modulation and dose is presented. An empirical model with just three terms is used to describe this response, allowing for direct calculation of photoresist modulation curves. A thresholded latent image response model has been tested to describe CD response for both 90 nm and 45 nm geometry. An assumption of a linear optical image to photoresist latent image correlation is shown as adequate for the 90 nm case, while the 45 nm case demonstrates significant non-linear behavior. This failure indicates the inadequacy of a "resist blur" as a complete descriptive function and uncovers the need for an additional spread function in OPE-style resist models.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Anatoly Bourov, Stewart A. Robertson, Bruce W. Smith, Michael Slocum, and Emil C. Piscani "Experimental measurement of photoresist modulation curves", Proc. SPIE 6154, Optical Microlithography XIX, 61542Z (20 March 2006); https://doi.org/10.1117/12.657608
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CITATIONS
Cited by 4 scholarly publications.
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KEYWORDS
Modulation

Photoresist materials

Data modeling

Error analysis

Interferometry

Calibration

Semiconducting wafers

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