Fracture friendly optical proximity correction for non-Manhattan features

John Nogatch; Robert Lugg; Mike Miller; Frank Amoroso

doi:10.1117/12.681804

20 May 2006 Fracture friendly optical proximity correction for non-Manhattan features

John Nogatch, Robert Lugg, Mike Miller, Frank Amoroso

Proceedings Volume 6283, Photomask and Next-Generation Lithography Mask Technology XIII; 62832Q (2006) https://doi.org/10.1117/12.681804
Event: Photomask and Next Generation Lithography Mask Technology XIII, 2006, Yokohama, Japan

Abstract

Optical Proximity Correction improves wafer image fidelity by combining small correction shapes with the original pattern data. Although these small shapes improve the exposure of the wafer image, the increase in total figure count results in longer fracture processing and E-beam writing time to create the mask. In this paper we describe alternative OPC treatment for jogs on non-Manhattan features, which reduce the additional figures produced, and make the data friendlier to the fracture and mask fabrication phases. Illustrations of example pattern data and improvement results in terms of figure counts are described.

Citation Download Citation

John Nogatch, Robert Lugg, Mike Miller, and Frank Amoroso "Fracture friendly optical proximity correction for non-Manhattan features", Proc. SPIE 6283, Photomask and Next-Generation Lithography Mask Technology XIII, 62832Q (20 May 2006); https://doi.org/10.1117/12.681804

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