Paper
28 September 2006 Ohmic characteristics of Pt and Ni/Au on Mg-doped AlxGa1-xN
Hoki Kwon, Bong Koo Kim, Gyong Geun Park, Sung Woo Kim, Jaewan Choi, Jeong Soo Lee, Weon G Jeong
Author Affiliations +
Proceedings Volume 6355, Advanced LEDs for Solid State Lighting; 63550J (2006) https://doi.org/10.1117/12.689268
Event: Asia-Pacific Optical Communications, 2006, Gwangju, South Korea
Abstract
Mg-doped AlxGa1-xN is grown by metal-organic chemical vapor deposition to investigate the Ohmic characteristics of Pt and Ni/Au. The Al solid composition measured by x-ray varies from 0.04 to 0.19, while the atomic concentration of Mg confirmed by secondary ion mass spectroscopy spans from 3x1019 to 1x1020 cm-3. The Ohmic characteristics are measured by current-voltage by varying the Mg activation temperature, Ohmic metal annealing temperature, and annealing time. The specific contact resistance is 3.5 and 7.5x10-5 Ω cm2.with Pt and Ni/Au in p-Al0.085Ga0.915N and p-Al0.14Ga0.86N measured by circular transmission line model, respectively. These are the lowest ever reported in p-AlGaN.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hoki Kwon, Bong Koo Kim, Gyong Geun Park, Sung Woo Kim, Jaewan Choi, Jeong Soo Lee, and Weon G Jeong "Ohmic characteristics of Pt and Ni/Au on Mg-doped AlxGa1-xN", Proc. SPIE 6355, Advanced LEDs for Solid State Lighting, 63550J (28 September 2006); https://doi.org/10.1117/12.689268
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KEYWORDS
Magnesium

Aluminum

Platinum

Metals

Gallium

Resistance

Annealing

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