Nanoheteroepitaxy of GaN on columnar SiC substrates by metalorganic chemical vapor deposition

Yi Fu; Ü. Özgür; Q. Fan; N. Biyikli; S. Chevtchenko; H. Morkoç; You Ke; Robert Devaty; W. J. Choyke; C. K. Inoki; T. S. Kuan

doi:10.1117/12.706889

8 February 2007 Nanoheteroepitaxy of GaN on columnar SiC substrates by metalorganic chemical vapor deposition

Yi Fu, Ü. Özgür, Q. Fan, N. Biyikli, S. Chevtchenko, H. Morkoç, You Ke, Robert Devaty, W. J. Choyke, C. K. Inoki, T. S. Kuan

Author Affiliations +

Proceedings Volume 6473, Gallium Nitride Materials and Devices II; 64731K (2007) https://doi.org/10.1117/12.706889
Event: Integrated Optoelectronic Devices 2007, 2007, San Jose, California, United States

Abstract

Preliminary results on nanoheteroepitaxy of GaN on silicon face (Si-face) and carbon face (C-face) nano-columnar SiC (CSC) by metalorganic chemical vapor deposition (MOCVD) are reported. The CSC substrates are fabricated from standard SiC wafers by photo-enhanced electrochemical etching, with typical diameter of pores around 20nm. Noticeable reduction of threading dislocations (TDs) in GaN is realized on the CSC substrates. On the C-face CSC, GaN nuclei have an inverted pyramidal shape which contains high density of stacking faults (SFs). These SFs block possible extension of TDs into upper portion of the layer. On the Si-face CSC, TDs are annihilated by forming nanoscale TD half-loops over the surface pores. These nanoscale TD loops confine the defective layer in GaN to within ~50 nm thickness from the GaN/CSC interface. High density (~5x10⁸ cm^-2) of remnant TDs still presents in GaN grown on CSC, chiefly because the surface damages on CSC were not properly removed before growth.

Citation Download Citation

Yi Fu, Ü. Özgür, Q. Fan, N. Biyikli, S. Chevtchenko, H. Morkoç, You Ke, Robert Devaty, W. J. Choyke, C. K. Inoki, and T. S. Kuan "Nanoheteroepitaxy of GaN on columnar SiC substrates by metalorganic chemical vapor deposition", Proc. SPIE 6473, Gallium Nitride Materials and Devices II, 64731K (8 February 2007); https://doi.org/10.1117/12.706889

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

;

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE