PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
Ge/SiGe quantum well electroabsorption modulators grown on silicon through relaxed SiGe buffers had shown strong
quantum-confined Stark effect (QCSE), even though Ge is an in-direct band gap semiconductor. The absorption
characteristic near the direct band gap edge can be tuned by applying an electric field. QCSE is the most efficient optical
modulation mechanism through direct light absorption and promising for reducing the device size and power
consumption. The device fabrication here is based on Ge-rich SiGe technology, which is also commonly used for various
silicon photonics applications. Here we will discuss Ge QCSE electroabsorption modulators as well as the consideration
of SiGe process integration for optical interconnects.
Yu-Hsuan Kuo andChe-Wei Chang
"Ge electroabsorption modulators and SiGe technology for optical interconnects", Proc. SPIE 6477, Silicon Photonics II, 64770X (9 February 2007); https://doi.org/10.1117/12.699635
ACCESS THE FULL ARTICLE
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
The alert did not successfully save. Please try again later.
Yu-Hsuan Kuo, Che-Wei Chang, "Ge electroabsorption modulators and SiGe technology for optical interconnects," Proc. SPIE 6477, Silicon Photonics II, 64770X (9 February 2007); https://doi.org/10.1117/12.699635