Paper
26 March 2007 Fast and accurate 3D mask model for full-chip OPC and verification
Author Affiliations +
Abstract
A new framework has been developed to model 3D thick mask effects for full-chip OPC and verifications. In addition to electromagnetic (EM) scattering effects, the new model also takes into account the non-Hopkins oblique incidence effects commonly found in real lithography systems but missing in prior arts. Evaluations against rigorous simulations and experimental data showed the new model provides improved accuracy, compared to both the thin-mask model and the thick-mask model based on Hopkins treatment of oblique incidence.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Peng Liu, Yu Cao, Luoqi Chen, Guangqing Chen, Mu Feng, Jiong Jiang, Hua-yu Liu, Sungsoo Suh, Sung-Woo Lee, and Sukjoo Lee "Fast and accurate 3D mask model for full-chip OPC and verification", Proc. SPIE 6520, Optical Microlithography XX, 65200R (26 March 2007); https://doi.org/10.1117/12.712171
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Cited by 23 scholarly publications.
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KEYWORDS
3D modeling

Photomasks

Data modeling

Optical proximity correction

Calibration

Binary data

Performance modeling

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