Simulation and experimental research on spherical dome by 3D laser forming of square feet

Lijun Yang; Yang Wang

doi:10.1117/12.725737

5 March 2007 Simulation and experimental research on spherical dome by 3D laser forming of square feet

Lijun Yang, Yang Wang

Proceedings Volume 6595, Fundamental Problems of Optoelectronics and Microelectronics III; 65951J (2007) https://doi.org/10.1117/12.725737
Event: Fundamental Problems of Optoelectronics and Microelectronics III, 2006, Harbin, China

Abstract

Laser forming is a technique of using the energy from a laser beam to modify and adjust the curvature of sheet metals or hard materials. 2-dimensional laser forming can reasonably accurately control bend angles with various materials. To advance this process further for realistic forming applications in a manufacturing industry, it is necessary to consider larger scale controlled 3-dimensional laser forming. However, this is a different situation for 3-dimensional laser forming. The work presented in this paper uses the spider scanning path to form the thin square sheet to spherical dome by laser forming. The explicit dynamic analysis on 3-dimentional laser forming is shown in the article. On the base of temperature gradient mechanism of 2-dimensional laser forming, depending on the geometry and the thermo-physical properties of stainless steel lCrl8Ni9Ti, develop the mechanism of laser forming of thin square sheet to the spherical dome. This paper discusses the interaction between moving laser beam and sheet, the temperature field on the sheet, and the step transition of stress and deformation in laser forming. In order to give the verification on the results of simulation, the correlative experiment has progressed with Lumonics JK7O2H Nd:YAG laser. The results of experiments are in accord with the simulation.

Citation Download Citation

Lijun Yang and Yang Wang "Simulation and experimental research on spherical dome by 3D laser forming of square feet", Proc. SPIE 6595, Fundamental Problems of Optoelectronics and Microelectronics III, 65951J (5 March 2007); https://doi.org/10.1117/12.725737

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