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The effects on the overall device noise of a small number of defects in device sections with a strong transfer impedance
coupling to the device terminals is discussed using advanced bulk and silicon-on-insulator n channel MOSFETs and
silicon nanowires as examples. From the measured noise and current-voltage data, the precise physical location of the
noise centers is determined. Potential noise reduction methods are discussed.
Gijs Bosman,Derek O. Martin, andShahed Reza
"Assessing the 1/f noise contributions of accidental defects in advanced semiconductor devices", Proc. SPIE 6600, Noise and Fluctuations in Circuits, Devices, and Materials, 66000A (8 June 2007); https://doi.org/10.1117/12.724471
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Gijs Bosman, Derek O. Martin, Shahed Reza, "Assessing the 1/f noise contributions of accidental defects in advanced semiconductor devices," Proc. SPIE 6600, Noise and Fluctuations in Circuits, Devices, and Materials, 66000A (8 June 2007); https://doi.org/10.1117/12.724471