Photodetectors for visible and near infra-red region with controlled sensitivity on the basis of p-GaSe single crystals doped by rare-earth elements

A. Sh. Abdinov; R. F. Babayeva; A. T. Bagirova; R. M. Rzaev

doi:10.1117/12.742329

26 April 2007 Photodetectors for visible and near infra-red region with controlled sensitivity on the basis of p-GaSe single crystals doped by rare-earth elements

A. Sh. Abdinov, R. F. Babayeva, A. T. Bagirova, R. M. Rzaev

Author Affiliations +

Proceedings Volume 6636, 19th International Conference on Photoelectronics and Night Vision Devices; 66360G (2007) https://doi.org/10.1117/12.742329
Event: 19th International Conference on Photoelectronics and Night Vision Devices, 2006, Moscow, Russian Federation

Abstract

Under various external conditions the features of initial and sensitized photoconductivity in p-GaSe with N_REE ≈ 0÷10^-1 at. % have been investigated. It is established that in the initial state investigated crystals possess photosensitivity only in the intrinsicl absorption region, photoelectric threshold and a relaxation velocity vary with change of N_REE. Under the influence by intrinsic highlight with relatively high intensity, or an external electric voltage (U) greater some critical value, investigated samples acquire photosensitivity also in the impurity region. It is supposed that the sensitization of the impurity photoconductivity in this material is connected to presence in the forbidden band of shallow trapping levels which concentration grows with increasing N_REE. The opportunity of the creation of highly stable photodetectors for visible and near IR irradiation with controlled sensitivity on the base of p-GaSe crystals has been shown.

Citation Download Citation

A. Sh. Abdinov, R. F. Babayeva, A. T. Bagirova, and R. M. Rzaev "Photodetectors for visible and near infra-red region with controlled sensitivity on the basis of p-GaSe single crystals doped by rare-earth elements", Proc. SPIE 6636, 19th International Conference on Photoelectronics and Night Vision Devices, 66360G (26 April 2007); https://doi.org/10.1117/12.742329

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available