Paper
26 April 2007 Structure and photoelectric properties of Pb1-xMnxSe epitaxial films
I. R. Nuriyev, M. B. Gadzhiyev, R. M. Sadigov, A. M. Nazarov
Author Affiliations +
Proceedings Volume 6636, 19th International Conference on Photoelectronics and Night Vision Devices; 66360X (2007) https://doi.org/10.1117/12.742554
Event: 19th International Conference on Photoelectronics and Night Vision Devices, 2006, Moscow, Russian Federation
Abstract
The features of growth, structure and photoelectric properties of Pb1-xMnxSe (x=0.02÷0.04) epitaxial films grown by the molecular beams condensation method in vacuum 10-4 Pa on BaF2 (111) substrate have been investigated. It is shown that received films possess high photosensitivity at 77 K temperature and their spectral characteristics vary by change of x. Shift of the maximum of spectral photosensitivity to shorter wavelengths with growth of x is explained by the increase in width of the forbidden band of Pbl-xMnxSe solid solutions with increase of manganese content.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
I. R. Nuriyev, M. B. Gadzhiyev, R. M. Sadigov, and A. M. Nazarov "Structure and photoelectric properties of Pb1-xMnxSe epitaxial films", Proc. SPIE 6636, 19th International Conference on Photoelectronics and Night Vision Devices, 66360X (26 April 2007); https://doi.org/10.1117/12.742554
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KEYWORDS
Solids

Manganese

Selenium

Lead

Chemical species

Crystals

Magnetism

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