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The features of growth, structure and photoelectric properties of Pb1-xMnxSe (x=0.02÷0.04) epitaxial films grown by the
molecular beams condensation method in vacuum 10-4 Pa on BaF2 (111) substrate have been investigated. It is shown that
received films possess high photosensitivity at 77 K temperature and their spectral characteristics vary by change of x. Shift of
the maximum of spectral photosensitivity to shorter wavelengths with growth of x is explained by the increase in width of the
forbidden band of Pbl-xMnxSe solid solutions with increase of manganese content.
I. R. Nuriyev,M. B. Gadzhiyev,R. M. Sadigov, andA. M. Nazarov
"Structure and photoelectric properties of Pb1-xMnxSe epitaxial films", Proc. SPIE 6636, 19th International Conference on Photoelectronics and Night Vision Devices, 66360X (26 April 2007); https://doi.org/10.1117/12.742554
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I. R. Nuriyev, M. B. Gadzhiyev, R. M. Sadigov, A. M. Nazarov, "Structure and photoelectric properties of Pb1-xMnxSe epitaxial films," Proc. SPIE 6636, 19th International Conference on Photoelectronics and Night Vision Devices, 66360X (26 April 2007); https://doi.org/10.1117/12.742554