Modification of charge transport in single crystal rubrene

Oleg Mitrofanov; D. V. Lang; T. Siegrist; W.-Y. So; C. Kloc; A. P. Ramirez

doi:10.1117/12.737082

13 September 2007 Modification of charge transport in single crystal rubrene

Oleg Mitrofanov, D. V. Lang, T. Siegrist, W.-Y. So, C. Kloc, A. P. Ramirez

Proceedings Volume 6658, Organic Field-Effect Transistors VI; 66580G (2007) https://doi.org/10.1117/12.737082
Event: Photonic Devices + Applications, 2007, San Diego, California, United States

Abstract

To investigate the impact of impurities on properties of single crystals of rubrene (C₄₈H₂₄), we consider structural, charge transport and optical properties. We show that transport properties are strongly influenced by the presence of a bandgap acceptor state, commonly occurring in crystals of rubrene. The bandgap state is likely caused by incorporation of an oxygen-related impurity. We demonstrate that the impurity presence can be detected using optical spectroscopy. The impurity model explains commonly-observed variations of rubrene properties. The acceptor-like characteristics of the impurity suggests a possible approach for modification of the charge transport in molecular crystals.

Citation Download Citation

Oleg Mitrofanov, D. V. Lang, T. Siegrist, W.-Y. So, C. Kloc, and A. P. Ramirez "Modification of charge transport in single crystal rubrene", Proc. SPIE 6658, Organic Field-Effect Transistors VI, 66580G (13 September 2007); https://doi.org/10.1117/12.737082

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