Paper
31 July 2007 Raman scattering diagnostics of as grown and pulsed laser modified Ge-Si nanostructures with quantum dots
E. I. Gatskevich, G. D. Ivlev, V. A. Volodin, A. V. Dvurechenskii, M. D. Efremov, A. I. Nikiforov, A. I. Yakimov
Author Affiliations +
Proceedings Volume 6728, ICONO 2007: Novel Photonics Materials; Optics and Optical Diagnostics of Nanostructures; 67281U (2007) https://doi.org/10.1117/12.752381
Event: The International Conference on Coherent and Nonlinear Optics, 2007, Minsk, Belarus
Abstract
The investigation of nanosecond ruby laser impact on Ge/Si heterostructures with GexSi1-x quantum dots (QD's) has been carried out. Both energy density in pulse and number of pulses changed. Raman spectroscopy was used to study the nanocluster states before and after laser irradiation. The method for control of composition and strain in Ge-Si based quantum dots was essentially improved.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
E. I. Gatskevich, G. D. Ivlev, V. A. Volodin, A. V. Dvurechenskii, M. D. Efremov, A. I. Nikiforov, and A. I. Yakimov "Raman scattering diagnostics of as grown and pulsed laser modified Ge-Si nanostructures with quantum dots", Proc. SPIE 6728, ICONO 2007: Novel Photonics Materials; Optics and Optical Diagnostics of Nanostructures, 67281U (31 July 2007); https://doi.org/10.1117/12.752381
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KEYWORDS
Germanium

Raman spectroscopy

Silicon

Quantum dots

Nanostructures

Pulsed laser operation

Raman scattering

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