Paper
13 February 2008 1 W reliable operation of broad area lasers and 8 W reliable operation of 5 mm wide laser bars at 650 nm
B. Sumpf, M. Zorn, J. Fricke, P. Ressel, H. Wenzel, G. Erbert, M. Weyers, G. Tränkle
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Abstract
Reliability tests for 650 nm broad area lasers and bars with GaInP quantum wells embedded in AlGaInP waveguide layers and n-AlInP and p-AlGaAs cladding layers will be presented. Reliable operation of broad area lasers with 100 μm stripe width at 1.0 W output power over 10,000 h and of 5 mm wide bars with ten 100 μm wide emitters (filling factor 20%) at 8 W over 4,000 h will be reported. 6 mm wide bars with twelve 60 μm wide emitters (filling factor 12%) at 7 W showed a mean time to failure of 3,750 h.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
B. Sumpf, M. Zorn, J. Fricke, P. Ressel, H. Wenzel, G. Erbert, M. Weyers, and G. Tränkle "1 W reliable operation of broad area lasers and 8 W reliable operation of 5 mm wide laser bars at 650 nm", Proc. SPIE 6876, High-Power Diode Laser Technology and Applications VI, 68760T (13 February 2008); https://doi.org/10.1117/12.761558
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Cited by 5 scholarly publications.
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KEYWORDS
Semiconductor lasers

Diamond

Reliability

Cladding

Laser applications

Quantum wells

Waveguides

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