GaN substrates by HVPE

Markus Weyers; Eberhard Richter; Ch. Hennig; S. Hagedorn; T. Wernicke; G. Tränkle

doi:10.1117/12.764405

13 February 2008 GaN substrates by HVPE

Markus Weyers, Eberhard Richter, Ch. Hennig, S. Hagedorn, T. Wernicke, G. Tränkle

Proceedings Volume 6910, Light-Emitting Diodes: Research, Manufacturing, and Applications XII; 69100I (2008) https://doi.org/10.1117/12.764405
Event: Integrated Optoelectronic Devices 2008, 2008, San Jose, California, United States

Abstract

The availability of GaN substrates is crucial for GaN-based laser diodes. Also high performance LEDs ask for high quality substrates. Methods for growth of bulk GaN are reviewed with a focus on hydride vapour phase epitaxy (HVPE), which currently is the method used for the production of GaN substrates. Also the ammonothermal approach is briefly discussed. Both approaches still have to overcome limitations before mass-production at affordable prices is feasible. These limitations are related to the maximum growth rate yielding high quality material as well as the boule length that can be achieved together with high material quality.

Citation Download Citation

Markus Weyers, Eberhard Richter, Ch. Hennig, S. Hagedorn, T. Wernicke, and G. Tränkle "GaN substrates by HVPE", Proc. SPIE 6910, Light-Emitting Diodes: Research, Manufacturing, and Applications XII, 69100I (13 February 2008); https://doi.org/10.1117/12.764405

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