Development of novel positive-tone resists for EUVL

Takanori Owada; Takeo Watanabe; Hiroo Kinoshita; Hiroaki Oizumi; Iwao Nishiyama

doi:10.1117/12.772404

26 March 2008 Development of novel positive-tone resists for EUVL

Takanori Owada, Takeo Watanabe, Hiroo Kinoshita, Hiroaki Oizumi, Iwao Nishiyama

Proceedings Volume 6923, Advances in Resist Materials and Processing Technology XXV; 692346 (2008) https://doi.org/10.1117/12.772404
Event: SPIE Advanced Lithography, 2008, San Jose, California, United States

Abstract

Low molecular weight materials that form a stable glass above room temperature offer several advantages comparison with traditional linear polymers as patterning feature size decreases. Low molecular weight amorphous materials that are free from chain entanglements with smaller molecular size and high density of sterically congested peripheral molecules are expected to reduce the variations in line edge roughness (LER) at smaller feature dimensions. In addition, the small uniform molecular size offers excellent processability, flexibility, transparency and uniform dissolution properties based on elemental composition. The evaluation of the novel low molecular weight amorphous resists was carried out both at NewSUBARU synchrotron facility of University of Hyogo, and at ASET EUV process technology research lab. in Japan. Newly synthesizes low molecular weight resist has shown high performance of sensitivity and resolution under EB or EUV exposures and also etch resistance. In this paper, we outline the design and synthesis of new molecular weight resists. The material properties, photochemistry and the patterning capability of these newly synthesizes low molecular weight resist will be discussed.

Citation Download Citation

Takanori Owada, Takeo Watanabe, Hiroo Kinoshita, Hiroaki Oizumi, and Iwao Nishiyama "Development of novel positive-tone resists for EUVL", Proc. SPIE 6923, Advances in Resist Materials and Processing Technology XXV, 692346 (26 March 2008); https://doi.org/10.1117/12.772404

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